WebJul 25, 2024 · IRF610 Pin Configuration IRF610 Key Features 3.3A, 200V RDS (ON) = 1.500Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Type Designator: IRF610 Type of Transistor: MOSFET Type of Control Channel: N -Channel IRF610 … WebIRF610 Product details. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device …
Vishay Siliconix: Features PDF Diode Field Effect Transistor
WebInductive Flyback and Flyback Diodes Introduction Inductive flyback refers to the voltage spike created by an inductor when its power supply is suddenly reduced or removed. This … WebIn the MOSFET transistors - Vishay (IR) category you will find: IRF610 MOSFET transistor. Manufacturer: Vishay. Ask for the product - professional advice at DACPOL. how is long service leave paid
Power MOSFET
WebContinuous source-drain diode current IS MOSFET symbol showing the integral reverse p - n junction diode-- 3.3 A Pulsed diode forward current a ISM-- 10 Body diode voltage VSD TJ = 25 °C, IS = 3.3 A, VGS = 0 V b-- 2.0V Body diode reverse recovery time t rr TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µs b - 150 310 ns Body diode reverse recovery ... WebIRF610 Datasheet, IRF610 PDF. Datasheet search engine for Electronic Components and Semiconductors. IRF610 data sheet, alldatasheet, free, databook. IRF610 parts ... WebLead (Pb)-free and halogen-free IRF610PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 200 V Gate-source voltage VGS ± 20 TC = 25 °C 3.3 Continuous drain current VGS at 10 V ID TC = 100 °C 2.1 A Pulsed drain current a IDM 10 Linear derating factor 0.29 W/°C how is long service leave paid out